Search for: All records

Discovery of new materials plays a critical role in developing advanced high-temperature thermoelectric (TE) applications. Transition metal oxides (TMOs) are one of the attractive candidates for hightemperature TE applications due to their thermal and chemical stability. However, the trade-off relationship between thermopower (S) and electrical conductivity (s) limits the maximum attainable power factor (PF), thereby hindering improvements in TE conversion efficiency. To overcome this tradeoff relationship, the emerging approach of the redox-driven metal exsolution in TMOs shows promise in improving both S and s. However, the effect of metal exsolution with different particle sizes and densities on S and s is still largely unexplored. This study demonstrates an unusually large enhancement in PF through the exsolution of Ni nanoparticles in epitaxial La0.7Ca0.2Ni0.25Ti0.75O3 (LCNTO) thin films. Metal exsolution leads to a decrease in the carrier concentration while increasing the carrier mobility due to energy filtering effects. In addition, the exsolved metal particles introduce high-mobility electron carriers into the low-mobility LCNTO matrix. Consequently, the exsolution of metal particles results in a significant enhancement in S along with a substantial increase in s, compared to the pristine film. Overall, the TE power factor of LCNTO is dramatically enhanced by up to 8 orders of magnitude owing to the presence of exsolved metal particles. This enhancement is attributed to the selective filtering of carriers caused by energy band bending at the metal–oxide interfaces and the high-mobility carriers from the exsolved Ni particles with a high Ni0 fraction. This study unequivocally demonstrates the impact of metal exsolution on oxide TE properties and provides a novel route to tailor the interconnected physical and chemical properties of oxides, leading to enhanced TE power output. 

Fluorographene, a fluorinated graphene-derivative, is expected to feature both high thermal conductivity and electrical insulation simultaneously, making it an emerging material for thermal management in electronic devices. In this paper, we investigated the lattice thermal conductivity and phonon transport properties of monolayer fluorographene using first-principles calculation. The solution of the fully linearized phonon Boltzmann transport equation gives the lattice thermal conductivity of monolayer fluorographene as 145.2 W m−1 K−1 at 300 K, which is about 20 times smaller than that of monolayer graphene. We systematically compared the phonon transport properties of all phonon modes in graphene and fluorographene in terms of phonon polarization. The significantly reduced thermal conductivity of fluorographene can be attributed to the lowering of both the lifetime of the flexural acoustic phonons and the group velocities of all acoustic phonons. We concluded that the broken in-plane mirror symmetry and the weaker in-plane chemical bonds induced by fluorination led to the suppression of the lattice thermal conductivity of fluorographene. Finally, we investigated the anomalously large contribution of optical phonons to the thermal transport process in fluorographene, where the large group velocities of selected optical phonons were derived from the in-plane acoustic modes of graphene. Our work provides a new approach to studying the influence of chemical functionalization on the phonon structure and exploring graphene-derived thermal management materials. 

We report the gate leakage current and threshold voltage characteristics of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) with metal-organic chemical vapor deposition (MOCVD) grown β-Ga2O3 as a gate dielectric for the first time. In this study, GaN channel HFET and β-Ga2O3 passivated metal-oxide-semiconductor-HFET (MOS-HFET) structures were grown in MOCVD using N2 as carrier gas on a sapphire substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to characterize the structural properties and surface morphology of the heterostructure. The electrical properties were analyzed using van der Pauw, Hall, and the mercury probe capacitance-voltage (C-V) measurement systems. The 2-dimensional electron gas (2DEG) carrier density for the heterostructure was found to be in the order of ~1013 cm-2. The threshold voltage shifted more towards the negative side for the MOSHFET. The high-low (Hi-Lo) frequency-based C-V method was used to calculate the interface charge density for the oxide-AlGaN interface and was found to be in the order of ~1012 cm2eV-1. A remarkable reduction in leakage current from 2.33×10-2 A/cm2 for HFET to 1.03×10-8 A/cm2 for MOSHFET was observed demonstrating the viability of MOCVD-grown Ga2O3 as a gate dielectric. 

High performance carbon fibers are widely used as fiber reinforcements in composite material systems for aerospace, automotive, and defense applications. Longitudinal tensile failure of such composite systems is a result of clustering of single fiber tensile failures occurring at the microscale, on the order of a few microns to a few hundred microns. Since fiber tensile strength at the microscale has a first order effect on composite strength, it is important to characterize the strength of single fibers at microscale gage lengths which is extremely challenging. An experimental technique based on a combination of transverse loading of single fibers under SEM with DIC is a potential approach to access microscale gage lengths. The SEM-DIC technique requires creation of uniform, random, and contrastive sub-microscale speckle pattern on the curved fiber surface for accurate strain measurements. In this paper, we investigate the formation of such sub-microscale speckle patterns on individual sized IM7 carbon fibers of nominal diameter 5.2 µm via sputter coating. Various process conditions such as working pressure, sputtering current, and coating duration are investigated for pattern creation on fiber surface using a gold-palladium (Au-Pd) target. A nanocluster type sub-microscale pattern is obtained on the fiber surface for different coating conditions. Numerical translation experiments are performed using the obtained patterns to study image correlation and identify a suitable pattern for SEM-DIC experiments. The pattern obtained at a working pressure of 120–140 mTorr with 50 mA current for a duration of 10 min is found to have an average speckle size of 53 nm and good contrast for image correlation. Rigid body translation SEM experiments for drift/distortion correction using a sized IM7 carbon fiber coated with the best patterning conditions showed that Stereo-SEM-DIC is needed for accurately characterizing fiber strain fields due to its curved surface. The effect of sputter coating on fiber tensile strength and strain is investigated via single fiber tensile tests. Results showed that there is no significant difference in the mean tensile strength and failure strain between uncoated and coated fibers (average increment in fiber diameter of ∼221 nm due to coating) at 5% significance level. SEM images of failure surfaces for uncoated and coated fibers also confirmed a tensile failure of fibers as observed for polyacrylonitrile PAN-based fibers in literature. 

We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor deposition (MOCVD). In this study, three different thicknesses of β-Ga2O3 dielectric layers were grown on Al0.3Ga0.7N/GaN structures leading to metal-oxide-semiconductor-HFET or MOSHFET structures. X-ray diffraction (XRD) showed the (2¯01) orientation peaks of β-Ga2O3 in the device structure. The van der Pauw and Hall measurements yield the electron density of ~ 4 × 1018 cm−3 and mobility of ~770 cm2V−1s−1 in the 2-dimensional electron gas (2DEG) channel at room temperature. Capacitance–voltage (C-V) measurement for the on-state 2DEG density for the MOSHFET structure was found to be of the order of ~1.5 × 1013 cm−2. The thickness of the Ga2O3 layer was inversely related to the threshold voltage and the on-state capacitance. The interface charge density between the oxide and Al0.3Ga0.7N barrier layer was found to be of the order of ~1012 cm2eV−1. A significant reduction in leakage current from ~10−4 A/cm2 for HFET to ~10−6 A/cm2 for MOSHFET was observed well beyond pinch-off in the off-stage at -20 V applied gate voltage. The annealing at 900° C of the MOSHFET structures revealed that the Ga2O3 layer was thermally stable at high temperatures resulting in insignificant threshold voltage shifts for annealed samples with respect to as-deposited (unannealed) structures. Our results show that the MOCVD-gown Ga2O3 dielectric layers can be a strong candidate for stable high-power devices.